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Proceedings Paper

Ion beam synthesis of WC-SiC nanocomposite thin layers and their electron field emission properties
Author(s): W. M. Tsang; S. P. Wong; J. K. N. Lindner
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Paper Abstract

A WC-SiC nanocomposite thin layer structure consisting of nano-grains of WC embedded in SiC has been fabricated on an n-type Si substrate by ion beam synthesis (IBS) using a metal vapor vacuum arc ion source. A SiC layer was first formed by high dose carbon implantation into the silicon substrate. Subsequent W implantation was preformed to form the WC-SiC nanocomposite structure that can be achieved under appropriate implantation and annealing conditions. Characterization of the implanted samples was performed using atomic force microscopy (AFM), conducting AFM, x-ray photoelectron spectroscopy, and transmission electron microscopy. Excellent field emission properties with an ultra-low turn-on field of 0.35 V/μm from such a nanocomposites structure have been achieved. While it has been demonstrated that the surface morphology effect and the local electrical inhomogeneity are two field enhancement mechanisms for IBS SiC/Si structures, they are not sufficient to account for the excellent emission properties of these WC-SiC nanocomposite layers. To explain the excellent field emission properties from these structures, a proximity field enhancement effect between closely spaced conducting grains in a dielectric medium and an internal quantum tunneling mechanism are proposed.

Paper Details

Date Published: 21 December 2005
PDF: 9 pages
Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 603702 (21 December 2005); doi: 10.1117/12.638686
Show Author Affiliations
W. M. Tsang, The Chinese Univ. of Hong Kong (Hong Kong China)
Univ. of Surrey (United Kingdom)
S. P. Wong, The Chinese Univ. of Hong Kong (Hong Kong China)
J. K. N. Lindner, Univ. of Augsburg (Germany)

Published in SPIE Proceedings Vol. 6037:
Device and Process Technologies for Microelectronics, MEMS, and Photonics IV
Jung-Chih Chiao; Andrew S. Dzurak; Chennupati Jagadish; David V. Thiel, Editor(s)

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