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Proceedings Paper

μ-Device fabrication and packaging below 300°C utilizing plasma-assisted wafer-to-wafer bonding
Author(s): Herwig Kirchberger; Rainer Pelzer; Sharon Farrens
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Paper Abstract

Wafer-to-wafer bonding techniques, such as anodic bonding or high temperature silicon direct fusion bonding, have been in development since the late 1960's and became key technologies for MEMS manufacturing. Plasma assisted wafer bonding is an emerging method offering several advantages over traditional bonding techniques. This technology was first discovered and patented in the early 1990's and has been used in SOI production for the past five years. Now plasma activation benefits are being used to enable 3D integration and advanced MEMS device fabrication and packaging. The main advantage of plasma assisted bonding is that high strength direct bonds between substrates, like Si, glass or polymers, can be achieved already below 300°C.

Paper Details

Date Published: 28 December 2005
PDF: 5 pages
Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 603705 (28 December 2005);
Show Author Affiliations
Herwig Kirchberger, EV Group (Austria)
Rainer Pelzer, EV Group (Austria)
Sharon Farrens, EV Group (Austria)

Published in SPIE Proceedings Vol. 6037:
Device and Process Technologies for Microelectronics, MEMS, and Photonics IV
Jung-Chih Chiao; Andrew S. Dzurak; Chennupati Jagadish; David V. Thiel, Editor(s)

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