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Proceedings Paper

Capacitance-voltage measurement in memory devices using ferroelectric polymer
Author(s): Chien A. Nguyen; Pooi See Lee
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Paper Abstract

Application of thin polymer film as storing mean for non-volatile memory devices is investigated. Capacitance-voltage (C-V) measurement of metal-ferroelectric-metal device using ferroelectric copolymer P(VDF-TrFE) as dielectric layer shows stable 'butter-fly' curve. The two peaks in C-V measurement corresponding to the largest capacitance are coincidental at the coercive voltages that give rise to zero polarization in the polarization hysteresis measurement. By comparing data of C-V and P-E measurement, a correlation between two types of hysteresis is established in which it reveals simultaneous electrical processes occurring inside the device. These processes are caused by the response of irreversible and reversible polarization to the applied electric field that can be used to present a memory window. The memory effect of ferroelectric copolymer is further demonstrated for fabricating polymeric non-volatile memory devices using metal-ferroelectric-insulator-semiconductor structure (MFIS). By applying different sweeping voltages at the gate, bidirectional flat-band voltage shift is observed in the ferroelectric capacitor. The asymmetrical shift after negative sweeping is resulted from charge accumulation at the surface of Si substrate caused by the dipole direction in the polymer layer. The effect is reversed for positive voltage sweeping.

Paper Details

Date Published: 28 December 2005
PDF: 8 pages
Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 60370S (28 December 2005); doi: 10.1117/12.638284
Show Author Affiliations
Chien A. Nguyen, Nanyang Technological Univ. (Singapore)
Pooi See Lee, Nanyang Technological Univ. (Singapore)

Published in SPIE Proceedings Vol. 6037:
Device and Process Technologies for Microelectronics, MEMS, and Photonics IV
Jung-Chih Chiao; Andrew S. Dzurak; Chennupati Jagadish; David V. Thiel, Editor(s)

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