
Proceedings Paper
1550 nm surface normal electroabsorption modulators for free space optical communicationsFormat | Member Price | Non-Member Price |
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Paper Abstract
We report on the design, fabrication and characterization of 1550 nm electroabsorption modulators based on InGaAs/InAlAs coupled quantum wells grown on InP substrate by MBE. Large and small single modulators and modulator arrays have been fabricated on a wafer scale with an optimized device fabrication technology. The modulator size, shape, contact arrangements, and the array configurations have been varied to achieve suitable device performance for different retro-reflective free-space optical communication links. The device electrical and optical properties have been characterized by I-V, photoluminescence, absorption, transmittance and reflectance measurements. Modulators exhibit contrast ratios of 2:1 at a 3V driving bias and contrast ratios of 2:1 over a 30 nm bandwidth at 6V. A maximum contrast ratio of 4:1 is obtained at a 12 V driving voltage.
Paper Details
Date Published: 26 October 2005
PDF: 7 pages
Proc. SPIE 5986, Unmanned/Unattended Sensors and Sensor Networks II, 598610 (26 October 2005); doi: 10.1117/12.630395
Published in SPIE Proceedings Vol. 5986:
Unmanned/Unattended Sensors and Sensor Networks II
Edward M. Carapezza, Editor(s)
PDF: 7 pages
Proc. SPIE 5986, Unmanned/Unattended Sensors and Sensor Networks II, 598610 (26 October 2005); doi: 10.1117/12.630395
Show Author Affiliations
Daniel Ågren, Acreo AB (Sweden)
Bertrand Noharet, Acreo AB (Sweden)
Jan Y. Andersson, Acreo AB (Sweden)
Bertrand Noharet, Acreo AB (Sweden)
Jan Y. Andersson, Acreo AB (Sweden)
Published in SPIE Proceedings Vol. 5986:
Unmanned/Unattended Sensors and Sensor Networks II
Edward M. Carapezza, Editor(s)
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