Share Email Print

Proceedings Paper

Laser ablation of SiOx thin films for direct mask writing
Author(s): J. Heber; J. Ihlemann; M. Schulz-Ruhtenberg; J. Schmidt
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The present study of silica thin films illustrates a new way of direct writing diffractive phase elements by means of UV laser ablation. The concept consists in the conversion of highly absorbing silica layers, which are suitable for laser ablation, into UV transparent structures by thermal annealing, after a direct laser patterning process. This concept has been investigated in detail for several process parameters. As example, a pixel pattern, generated by an appropriate optical design algorithm, is transferred into a phase delay pattern in form of a silica surface relief, which results in a diffractive shaping of a beam transmitted (or reflected) by this structured layer. The direct mask patterning could be achieved at a moderate laser fluence of 350 mJ/cm2 with a 248 nm excimer laser.

Paper Details

Date Published: 5 October 2005
PDF: 7 pages
Proc. SPIE 5963, Advances in Optical Thin Films II, 596326 (5 October 2005); doi: 10.1117/12.625359
Show Author Affiliations
J. Heber, Fraunhofer Institut für Photonische Mikrosysteme (Germany)
J. Ihlemann, Laser-Lab. Göttingen e.V. (Germany)
M. Schulz-Ruhtenberg, Laser-Lab. Göttingen e.V. (Germany)
J. Schmidt, Fraunhofer Institut für Photonische Mikrosysteme (Germany)

Published in SPIE Proceedings Vol. 5963:
Advances in Optical Thin Films II
Claude Amra; Norbert Kaiser; H. Angus Macleod, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?