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Proceedings Paper

Self-starting mode-locked fiber laser using biased semiconductor absorber mirror
Author(s): A. Isomäki; A. Vainionpää; S. Suomalainen; O. G. Okhotnikov
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Paper Abstract

We present an erbium-doped fiber laser mode-locked using a reverse-biased InGaAsP multiple quantum-well saturable absorber. We have examined the performance of a p-type-intrinsic-n-type (PIN) structured semiconductor absorber mirror both in starting the pulse operation and in pulse shaping. We have also found that applying a reverse bias is a useful means to suppress the Q-switching instability. By varying the reverse bias voltage applied to the absorber mirror, we could change the recovery time of the device owing to the electric-field-induced carrier sweep-out. Through the sweep-out process we were able to control the mode-locking start-up capability and the pulse duration of the fiber laser. In the experiment the mode-locked pulse duration could be reduced from 50 to 20 ps by application of an 80 kV/cm sweep-out field in the intrinsic region of the PIN absorber. The equivalent spectral broadening by a factor of 2.5 was observed as well.

Paper Details

Date Published: 11 October 2005
PDF: 5 pages
Proc. SPIE 5958, Lasers and Applications, 59580R (11 October 2005); doi: 10.1117/12.622869
Show Author Affiliations
A. Isomäki, Tampere Univ. of Technology (Finland)
A. Vainionpää, Tampere Univ. of Technology (Finland)
S. Suomalainen, Tampere Univ. of Technology (Finland)
O. G. Okhotnikov, Tampere Univ. of Technology (Finland)

Published in SPIE Proceedings Vol. 5958:
Lasers and Applications
Krzysztof M. Abramski; Antonio Lapucci; Edward F. Plinski, Editor(s)

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