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Preparation and physical properties of germanium thin films
Author(s): Meng Guo; Hongbo He; Kui Yi; Shuying Shao; Jianda Shao
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Paper Abstract

Prepared by electron beam evaporation with argon plasma assistance, ultrathin Ge films on JGS1, CaF2 and Si substrates at different deposition temperatures has been investigated by grazing incidence X-ray reflectivity (GIXRR), spectrophotometer, atomic force microscopy. By investigation of the influence of deposition temperature ranging from 100 to 300degC and annealing treatment on transmittance, morphologies of Ge thin films. It can be seen that both deposition temperature exchange and annealing treatment can significantly affect the thickness of Ge thin films. And there is an enhancement of attenuation on films transmittance with the increasing of deposition temperature on JGS1 and CaF2 substrates, while it’s not significant on Si substrate. In addition, it can be seen that the roughness of Ge films on JGS1 and CaF2 substrates has similar variation, which is different from the roughness of Ge films on Si substrate.

Paper Details

Date Published: 8 July 2019
PDF: 6 pages
Proc. SPIE 11064, Tenth International Conference on Thin Film Physics and Applications (TFPA 2019), 1106410 (8 July 2019); doi: 10.1117/12.2539294
Show Author Affiliations
Meng Guo, Shanghai Institute of Optics and Fine Mechanics (China)
Univ. of Chinese Academy of Sciences (China)
Hongbo He, Shanghai Institute of Optics and Fine Mechanics (China)
Kui Yi, Shanghai Institute of Optics and Fine Mechanics (China)
Shuying Shao, Shanghai Institute of Optics and Fine Mechanics (China)
Jianda Shao, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 11064:
Tenth International Conference on Thin Film Physics and Applications (TFPA 2019)
Junhao Chu; Jianda Shao, Editor(s)

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