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THz interconnect for inter-/intra-chip communication
Author(s): Qun Jane Gu; Bo Yu; Xuan Ding; Yu Ye; Xiaoguang Liu; Zhiwei Xu
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Paper Abstract

“Interconnect Gap”, caused by the gap between the ever-increasing data rate demand of inter-/intra- chip communications and the insufficient capabilities, has intrigued active research over a decade from both electronics and optics domains, so called electrical interconnect (EI) and optical interconnect (OI). However, it is challenging for both EI and OI to completely address the interconnect issues individually due to their inherent challenges. THz Interconnect (TI), utilizing the frequency spectrum sandwiched between microwave and optical frequencies, holds the high potentials to complement EI and OI by leveraging the advantages of both electronics and optics. Continuous scaling of mainstream silicon technologies enables THz electronics in silicon. On the other hand, THz dielectric waveguides, similar to their optical counterpart fiber, have small dimensions and present low loss at THz frequencies. This paper will present the research activities in the high potential TI field, including high efficiency THz signal generation and modulation circuits, low loss and wide bandwidth THz silicon waveguide channels together with ortho-mode support, and system demonstration of the THz Interconnect for chip to chip communications.

Paper Details

Date Published: 13 May 2019
PDF: 8 pages
Proc. SPIE 10982, Micro- and Nanotechnology Sensors, Systems, and Applications XI, 109822R (13 May 2019); doi: 10.1117/12.2518567
Show Author Affiliations
Qun Jane Gu, Univ. of California, Davis (United States)
Bo Yu, Univ. of California, Davis (United States)
Xuan Ding, Univ. of California, Davis (United States)
Yu Ye, Univ. of California, Davis (United States)
Xiaoguang Liu, Univ. of California, Davis (United States)
Zhiwei Xu, Zhejiang Univ. (China)


Published in SPIE Proceedings Vol. 10982:
Micro- and Nanotechnology Sensors, Systems, and Applications XI
Thomas George; M. Saif Islam, Editor(s)

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