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Terahertz plasmonic field effect transistors for imaging applications
Author(s): M. Shur; N. Pala
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Paper Abstract

Terahertz (THz) imaging technology applications require fast electronic devices with high responsivity, good selectivity, and large bandwidth. Field Effect Transistors operating in the THz or sub-THz range and using the rectification of plasma waves satisfy these requirements. InGaAs-based, GaN-based, and Si nanostructure arrays of plasmonic devices (referred to as TeraFETs) compete for plasmonic THz imaging applications. Depending on the channel size and the electron mobility, TeraFETs could operate in three different plasmonic regimes - collision-dominated, ballistic, and viscous with the highest modulation frequency reaching the sub-THz range of frequencies. Another advantage of TeraFETs as imaging elements is a wide dynamic range - from relatively low intensity signals up to the high intensity impinging THz beam causing the excitation of nonlinear plasma waves, such as shock waves or solitons propagating in the device channels. The TeraFETs could achieve resolution down to the nanometer scale. The plasmonic electronics technology might become a dominant THz electronics technology and support sensing, imaging, and communications at THz frequencies

Paper Details

Date Published: 13 May 2019
PDF: 8 pages
Proc. SPIE 10982, Micro- and Nanotechnology Sensors, Systems, and Applications XI, 109822Z (13 May 2019); doi: 10.1117/12.2517428
Show Author Affiliations
M. Shur, Rensselaer Polytechnic Institute (United States)
Electronics of the Future, Inc. (United States)
N. Pala, Florida International Univ. (United States)


Published in SPIE Proceedings Vol. 10982:
Micro- and Nanotechnology Sensors, Systems, and Applications XI
Thomas George; M. Saif Islam, Editor(s)

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