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Proceedings Paper

Line roughness improvements on EUV 36nm pitch pattern by plasma treatment method
Author(s): Toshiharu Wada; Chia-Yun Hsieh; Akiteru Ko; Peter Biolsi
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Paper Abstract

TEL’s patented DCS function and conventional plasma treatment were applied on EUV PR to examine the effect of ion/radical loading and surface modification. The DCS function accelerates plasma selective deposition particularly on the top of EUV PR at 36nm pitch. The increment of EUV PR height secures etching budget and provides longer plasmas smoothing period. In addition, line roughness was also smoothed during area plasma selective deposition due to loading effect. In this study, our plasma treatment was able to improve PR roughness by 30% comparing to as-exposed litho and the performance was kept to the next oxide layer. Furthermore, an extra 13.7nm of PR was gained which enlarged the process windows of etching selectivity and plasma smoothing effect.

Paper Details

Date Published: 29 March 2019
PDF: 8 pages
Proc. SPIE 10963, Advanced Etch Technology for Nanopatterning VIII, 109630I (29 March 2019); doi: 10.1117/12.2514764
Show Author Affiliations
Toshiharu Wada, TEL Technology Ctr., America, LLC (United States)
Chia-Yun Hsieh, TEL Technology Ctr., America, LLC (United States)
Akiteru Ko, TEL Technology Ctr., America, LLC (United States)
Peter Biolsi, TEL Technology Ctr., America, LLC (United States)

Published in SPIE Proceedings Vol. 10963:
Advanced Etch Technology for Nanopatterning VIII
Richard S. Wise; Catherine B. Labelle, Editor(s)

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