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Proceedings Paper

Study of the role of the interface on the defect density in HfO2 films using STEREO-LID (Spatio-TEmporally REsolved Optical Laser-Induced Damage)
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Paper Abstract

The defect densities controlling the LIDT of three HfO2 films with different underlying interfaces were measured using STEREO-LID. This technique measures the actual damage fluence during a 1-on-1 test. The films were tested with pulses of ~10 ns duration at 1064 nm. The 30-nm HfO2 films were prepared by ion-beam sputtering: the first was deposited directly on a fused silica substrate; the second was deposited after first laying down a half-wave buffer layer of SiO2; the third was deposited on a half-wave SiO2 buffer with a gradual transition to HfO2. The buffer layer reduces the density of defects triggering damage at low fluence by more than a factor of two, but the gradual interface slightly adds to the defect density. The implications of these results are compared to the damage behavior of a thicker (quarter-wave) HfO2 film.

Paper Details

Date Published: 16 November 2018
PDF: 7 pages
Proc. SPIE 10805, Laser-Induced Damage in Optical Materials 2018: 50th Anniversary Conference, 108052H (16 November 2018); doi: 10.1117/12.2500291
Show Author Affiliations
Luke A. Emmert, The Univ. of New Mexico (United States)
Sebastian Töpfer, The Univ. of New Mexico (United States)
Thomas Willemsen, Laser Zentrum Hannover e.V. (Germany)
Marco Jupé, Laser Zentrum Hannover e.V. (Germany)
Detlev Ristau, Laser Zentrum Hannover e.V. (Germany)
Wolfgang Rudolph, The Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 10805:
Laser-Induced Damage in Optical Materials 2018: 50th Anniversary Conference
Christopher Wren Carr; Gregory J. Exarhos; Vitaly E. Gruzdev; Detlev Ristau; M.J. Soileau, Editor(s)

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