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Proceedings Paper

Recent progress in MBE grown HgCdTe materials and devices at UWA
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Paper Abstract

HgCdTe has dominated the high performance end of the IR detector market for decades. At present, the fabrication costs of HgCdTe based advanced infrared devices is relatively high, due to the low yield associated with lattice matched CdZnTe substrates and a complicated cooling system. One approach to ease this problem is to use a cost effective alternative substrate, such as Si or GaAs. Recently, GaSb has emerged as a new alternative with better lattice matching. In addition, implementation of MBE-grown unipolar n-type/barrier/n-type detector structures in the HgCdTe material system has been recently proposed and studied intensively to enhance the detector operating temperature. The unipolar nBn photodetector structure can be used to substantially reduce dark current and noise without impeding photocurrent flow. In this paper, recent progress in MBE growth of HgCdTe infrared material at the University of Western Australia (UWA) is reported, including MBE growth of HgCdTe on GaSb alternative substrates and growth of HgCdTe nBn structures.

Paper Details

Date Published: 20 May 2016
PDF: 9 pages
Proc. SPIE 9819, Infrared Technology and Applications XLII, 98191Z (20 May 2016); doi: 10.1117/12.2222997
Show Author Affiliations
R. Gu, The Univ. of Western Australia (Australia)
W. Lei, The Univ. of Western Australia (Australia)
J. Antoszewski, The Univ. of Western Australia (Australia)
I. Madni, The Univ. of Western Australia (Australia)
G. Umana-Menbreno, The Univ. of Western Australia (Australia)
L. Faraone, The Univ. of Western Australia (Australia)

Published in SPIE Proceedings Vol. 9819:
Infrared Technology and Applications XLII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)

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