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Proceedings Paper

Study on ADI CD bias correlating ABC function
Author(s): Guogui Deng; Jingan Hao; Bin Xing; Yuntao Jiang; Gaorong Li; Qiang Zhang; Liwan Yue; Yanlei Zu; Huayong Hu; Chang Liu; Manhua Shen; Shijian Zhang; Weiming He; Nannan Zhang; Yi-Shih Lin; Qiang Wu; Xuelong Shi
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Paper Abstract

As the technology node of semiconductor industry is being driven into more advanced 28 nm and beyond, the critical dimension (CD) error budget at after-development inspection (ADI) stage and its control are more and more important and difficult (1-4). 1 nm or even 0.5 nm CD difference is critical for process control. 0.5~1 nm drift of poly linewidth will result in a detectable off-target drift of device performance. The 0.5~1 nm CD drift of hole or metal linewidth on the backend interconnecting layers can potentially contribute to the bridging of metal patterns to vias, and thereby impact yield. In this paper, we studied one function in the scanning electron microscope (SEM) measurement, i.e. the adjustment of brightness and contrast (ABC). We revealed how the step of addressing focus and even the choice of addressing pattern may bring in a systematic error into the CD measurement. This provides a unique insight in the CD measurement and the measurement consistency of through-pitch (TP) patterns and functional patterns.

Paper Details

Date Published: 19 March 2015
PDF: 8 pages
Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 94242I (19 March 2015); doi: 10.1117/12.2086093
Show Author Affiliations
Guogui Deng, Semiconductor Manufacturing International Corp. (China)
Jingan Hao, Semiconductor Manufacturing International Corp. (China)
Bin Xing, Semiconductor Manufacturing International Corp. (China)
Yuntao Jiang, Semiconductor Manufacturing International Corp. (China)
Gaorong Li, Semiconductor Manufacturing International Corp. (China)
Qiang Zhang, Semiconductor Manufacturing International Corp. (China)
Liwan Yue, Semiconductor Manufacturing International Corp. (China)
Yanlei Zu, Semiconductor Manufacturing International Corp. (China)
Huayong Hu, Semiconductor Manufacturing International Corp. (China)
Chang Liu, Semiconductor Manufacturing International Corp. (China)
Manhua Shen, Semiconductor Manufacturing International Corp. (China)
Shijian Zhang, Semiconductor Manufacturing International Corp. (China)
Weiming He, Semiconductor Manufacturing International Corp. (China)
Nannan Zhang, Semiconductor Manufacturing International Corp. (China)
Yi-Shih Lin, Semiconductor Manufacturing International Corp. (China)
Qiang Wu, Semiconductor Manufacturing International Corp. (China)
Xuelong Shi, Semiconductor Manufacturing International Corp. (China)


Published in SPIE Proceedings Vol. 9424:
Metrology, Inspection, and Process Control for Microlithography XXIX
Jason P. Cain; Martha I. Sanchez, Editor(s)

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