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Proceedings Paper

Predictability and impact of product layout induced topology on across-field focus control
Author(s): J.-G. Simiz; T. Hasan; F. Staals; B. Le-Gratiet; P. Gilgenkrantz; A. Villaret; F. Pasqualini; W. T. Tel; C. Prentice; A. Tishchenko
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Paper Abstract

With continuing dimension shrinkage using the TWINSCAN NXT:1950i scanner on the 28nm node and beyond, the imaging depth of focus (DOF) becomes more critical. Focus budget breakdown studies [Ref 1, 5] show that even though the intrafield component stays the same this becomes a larger relative percentage of the overall DOF. Process induced topography along with reduced Process Window can lead to yield limitations and defectivity issues on the wafer. To improve focus margin, a study has been started to determine if some correlations between scanner levelling performance, product layout and topography can be observed. Both topography and levelling intrafield fingerprints show a large systematic component that seems to be product related. In particular, scanner levelling measurement maps present a lot of similarities with the layout of the product. The present paper investigates the possibility to model the level sensor’s measured height as a function of layer design densities or perimeter data of the product. As one component of the systematics from the level sensor measurements is process induced topography due to previous deposition, etching and CMP, several layer density parameters were extracted from the GDS’s. These were combined through a multiple variable analysis (PLS: Partial Least Square regression) to determine the weighting of each layer and each parameter. Current work shows very promising results using this methodology, with description quality up to 0.8 R2 and expected prediction quality up to 0.78 Q2. Since product layout drives some intrafield focus component it is also important to be able to assess intrafield focus uniformity from post processing. This has been done through a hyper dense focus map experiment which is presented in this paper.

Paper Details

Date Published: 19 March 2015
PDF: 12 pages
Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 94241C (19 March 2015); doi: 10.1117/12.2085283
Show Author Affiliations
J.-G. Simiz, STMicroelectronics (France)
T. Hasan, ASML Netherlands B. V. (Netherlands)
F. Staals, ASML Netherlands B. V. (Netherlands)
B. Le-Gratiet, STMicroelectronics (France)
P. Gilgenkrantz, STMicroelectronics (France)
A. Villaret, STMicroelectronics (France)
F. Pasqualini, STMicroelectronics (France)
W. T. Tel, ASML Netherlands B. V. (Netherlands)
C. Prentice, ASML SARL (France)
A. Tishchenko, LaHC CNRS (France)

Published in SPIE Proceedings Vol. 9424:
Metrology, Inspection, and Process Control for Microlithography XXIX
Jason P. Cain; Martha I. Sanchez, Editor(s)

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