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Proceedings Paper

Accelerated technology development by the use of critical point imaging SEM
Author(s): Dominique Sanchez; Benôit Hinschberger; Loemba Bouckou; Olivier Moreau; Paolo Parisi
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Paper Abstract

In order to optimize the time to market of the newest technology nodes and maximize their profitability, advanced semiconductor manufacturers need to adapt their yield enhancement strategies to their current development stage. During very early development, gross Defectivity at some critical process steps often makes it impractical to use broadband plasma or laser scanning micro-defect patterned wafer inspection techniques: such sensitive defect inspections capture a large number of defects, producing wafer defect maps so heavily populated that even wafer level signature are difficult to visualize.

Paper Details

Date Published: 19 March 2015
PDF: 6 pages
Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 94242H (19 March 2015); doi: 10.1117/12.2073889
Show Author Affiliations
Dominique Sanchez, STMicroelectronics (France)
Benôit Hinschberger, STMicroelectronics (France)
Loemba Bouckou, KLA-Tencor France (France)
Olivier Moreau, KLA-Tencor Corp. (United States)
Paolo Parisi, KLA-Tencor France (France)

Published in SPIE Proceedings Vol. 9424:
Metrology, Inspection, and Process Control for Microlithography XXIX
Jason P. Cain; Martha I. Sanchez, Editor(s)

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