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Proceedings Paper

Response of plasmonic terahertz detector to large signals: theory and experiment
Author(s): S. Rudin; G. Rupper; A. Gutin; M. Shur
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Paper Abstract

In the Dyakonov-Shur terahertz (THz) detector, nonlinearities in the plasma wave propagation in the conduction channel of a heterostructure High Electron Mobility Transistor (HEMT) lead to a constant source-to-drain voltage providing the detector output. For a small signal, the perturbation theory treatment shows that the response is proportional to the intensity of the radiation. The proportionality factor can have a resonant or a broad dependence on the signal frequency. For submicron HEMTs, the typical measured response falls within the range of 0.1 to 4.5 THz. The deviations from this relation have been studied and reported in the approximation of the local Ohm’s law and transmission line model for the non-resonant response. Here we present the results obtained with the hydrodynamic model using the electron plasma Navier-Stokes equation, thus fully accounting for the hydrodynamic non-linearity, the viscosity and pressure gradients in the detector response. The model is applicable to both resonant and broadband operations of the HEMT based plasmonic detectors. The relation between the electron channel density and gate voltage was modeled by the unified charge control model applicable both above and below the threshold voltage. The theoretical results are compared with the response measured in the short channel InGaAs HEMT and the analytical approximation. The THz source was operating at 1.63 THz and the response was measured at varying signal intensities. The response of the detector operated in the open drain mode was measured above and below the threshold. The theoretical and experimental results are in good agreement.

Paper Details

Date Published: 31 May 2013
PDF: 11 pages
Proc. SPIE 8716, Terahertz Physics, Devices, and Systems VII: Advanced Applications in Industry and Defense, 87160D (31 May 2013); doi: 10.1117/12.2015330
Show Author Affiliations
S. Rudin, U.S. Army Research Lab. (United States)
G. Rupper, U.S. Army Research Lab. (United States)
A. Gutin, Rensselaer Polytechnic Institute (United States)
M. Shur, Rensselaer Polytechnic Institute (United States)

Published in SPIE Proceedings Vol. 8716:
Terahertz Physics, Devices, and Systems VII: Advanced Applications in Industry and Defense
Mehdi F. Anwar; Thomas W. Crowe; Tariq Manzur, Editor(s)

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