The Moscone Center
San Francisco, California, United States
1 - 6 February 2020
Conference LA106
Vertical External Cavity Surface Emitting Lasers (VECSELs) X
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Abstract Due:
24 July 2019

Author Notification:
30 September 2019

Manuscript Due Date:
8 January 2020

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Conference Chair
  • Jennifer E. Hastie, Univ. of Strathclyde (United Kingdom)

Program Committee
Program Committee continued...
  • Ursula Keller, ETH Zurich (Switzerland)
  • Walter Lubeigt, M Squared Lasers Ltd. (United Kingdom)
  • Jerome V. Moloney, College of Optical Sciences, The Univ. of Arizona (United States)
  • Wolfgang Stolz, NAsP III/V GmbH (Germany)
  • Anne C. Tropper, Univ. of Southampton (United Kingdom)
  • Keith G. Wilcox, Univ. of Dundee (United Kingdom)

Call for
The purpose of this conference is to highlight current work in the rapidly developing field of optically- and electrically-pumped vertical external cavity surface emitting lasers (VECSELs). These lasers, which are also referred to as optically-pumped semiconductor lasers (OPSLs) or semiconductor disk lasers (SDLs), have gained a strong interest for brightness scaling over a broad range of emission wavelengths. In a VECSEL the light is emitted perpendicular to the epitaxial layers, unlike edge-emitting lasers where the beam propagates in the epitaxial layers. In contrast to a VCSEL (i.e. a vertical cavity surface emitting laser) the external cavity of the VECSEL offers additional mode control for excellent transverse beam quality, even at highest power levels, and enables the integration of elements for nonlinear intracavity frequency conversion, wavelength tuning elements, or passive mode-locking.

Since the first demonstration in 1997, we have seen tremendous progress in VECSEL research, operating in both continuous-wave and the ultrafast regime. Optically-pumped VECSELs can convert low-cost, low-beam-quality optical pump beams provided by high-power diode laser bars into a near-diffraction-limited output beam with good efficiency and intrinsically low noise. This has resulted in achieving more than 20 W CW power in single frequency operation, substantially higher than from any other type of semiconductor laser. An important advantage compared to well-established diode-pumped solid-state lasers, is that VECSELs operate in spectral regions not covered by solid-state laser gain materials. To date, direct CW emission from VECSELs has been demonstrated for the entire wavelength range covered by compound semiconductors, extending from 640 nm to 2.9 µm, and have been extended even to 4-5 µm. Moreover they allow efficient, low-noise, intra-cavity nonlinear frequency conversion to further broaden spectral coverage, including visible, ultra-violet, and terahertz emission.

In mode-locked operation, the performance of ultrafast VECSELs has also surpassed that of other semiconductor lasers. Ultrafast VECSELs have generated average power levels of several Watts in several-hundred-femtosecond pulses. Pulse durations below 100 fs have been achieved, and the repetition rate of fundamentally mode-locked VECSELs has increased to tens of GHz. Furthermore the SESAM and the VECSEL gain structure can be integrated into a single semiconductor structure, which is referred to as a mode-locked integrated external-cavity surface emitting laser (MIXSEL). MIXSELs can produce fundamentally mode-locked trains of sub-picosecond pulses at repetition rates over 100 GHz. Recently, ultrafast VECSELs and MIXSELs have been used to generate gigahertz self-referenceable frequency combs and dual wavelength combs.

Such VECSEL performance is well-suited for many applications including laser projection, optical clocking, frequency metrology, high resolution nonlinear multiphoton microscopy, and laser cooling.

A selection of invited papers will provide a comprehensive overview of the latest progress in this new field. In addition, contributed papers are solicited for this VECSEL conference with the focus on:
  • power scaling of VECSELs and MIXSELs
  • novel wavelength, heat management and optical pumping schemes
  • material systems, epilayer design, and epitaxial fabrication
  • intracavity nonlinear frequency conversion
  • numerical modeling of gain, dynamical behavior, thermal behavior
  • experimental characterization of semiconductor components, including ultrafast dynamics
  • electrical pumping
  • mode-locked operation
  • single frequency operation
  • passive and active stabilization
  • frequency comb generation and applications
  • integrated extended cavities and wafer processing
  • specially designed VECSELs and MIXELS for specific applications.

Best Student Presentation Award
The committee is pleased to announce that this year a cash prize of $500, donated by Coherent Inc., will be awarded for the best student presentation; judged, by the committee, on the basis of scientific content, impact, and clarity.

To be eligible for consideration, the student must:
  • submit their abstract online by the deadline
  • be the primary author
  • select “Yes” when asked if they are a full-time student
  • select themselves as the speaker
  • be accepted to present an oral presentation
  • make the oral presentation.
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