Dr. Peter G. Schunemann

Peter G. Schunemann has been a leading researcher in the development of nonlinear optical materials for over 25 years, authoring or co-authoring nearly 250 publications in the field. He received B.S. and M.S. degrees in Materials Science and Engineering from the Massachusetts Institute of Technology in 1984 and 1987 respectively. He joined BAE Systems in 1987, where he has served as principal investigator on numerous of crystal growth development programs to produce improved nonlinear optical crystals for mid-infrared laser applications. In the last decade his emphasis has shifted from melt growth of exotic IR crystals to hydride vapor phase growth of patterned III-V semiconductors. His work on ZnGeP2 in particular, a critical component for the next generation laser-based IRCM systems, earned him a Quarterly Technical Achievement Award in 1992, the Jack L. Bowers Award in 1994 (the company’s highest technical award), and a Nova Award in 1995 (Lockheed Martin’s highest honor for technical excellence), and the Association of Old Crows Technology Hall of Fame award in 2002. He is an OSA Fellow, a member of SPIE and MRS, and is currently the president of AACG (American Association of Crystal Growth).