Dr. Marco Mandurrino

Physicist and Engineer - specialist in solid state physics, quantum physics, computational physics and electronic devices - he worked at Politecnico di Torino (Italy) mainly focusing his activity on the study and modeling of quantum tunneling in semiconductor nanostructures and its correlation with crystal defects, especially for what concerns trap-assisted-tunneling (TAT) and band-to-band tunneling (BTBT) in nitride-based diodes and HgCdTe IR detectors. Presently he is involved as Post-Doctoral Research Fellow at INFN (the Italian National Institute for Nuclear Physics) in a project within the RD50 programme whose aim is to design and optimize new generations of radiation-resistant silicon particle detectors for ultra-fast timing measurements in the high luminosity-LHC (HL-LHC) at CERN.