Dr. Laurent Rubaldo

Laurent Rubaldo was born in France, in1975. He received the Ph.D. degree in Physics from the University Joseph Fourier of Grenoble in 2001. He did his Ph.D. at the High Magnetic Field Laboratory of CNRS Grenoble in collaboration with the Institute of Science and Technology of the Manchester University. He studied deep levels in silicon, silicon alloys and III-V materials by Laplace DLTS, combining magnetic field and uniaxial stress to investigate the electronic and structural properties of defects.
He joined STMicroelectronics (Crolles France) in 2001 first as reliability Engineer, to study and modelize new hot carrier mechanisms for submicron CMOS transistors and in 2003 he joined the Front End Material R&D group to develop ultra-doped epitaxial Si and Si alloys by MOCVD. In 2007, he joined the Sofradir Group in the R&D Department, as a Semiconductor Characterization Expert, to work on electro-optical characterization and performances optimization of cooled IR Photodetectors.