Performance of Optical to Near Infrared TiN/Ti/TiN Tri-Layer Microwave Kinetic Inductance Detectors

MKIDs made from alternating stacks of Ti and TiN have shown impressive results in far-IR and sub-mm detectors to date, which promises improvements for Optical to Near-IR MKIDs. TiN/Ti/TiN tri-layers offer different advantages between sub-stoichiometric and stoichiometric recipes. We will elaborate on the expected effects of using sub-stoichiometric vs. stoichiometric TiN in triple layers on the wavelength signal-to-noise ratio of MKIDs. We characterise the photon detection performance of TiN/Ti/TiN Optical to Near Infrared MKIDs deposited on silicon wafers. We present measurements of resolving power, quasi-particle lifetime and sensitivity to near-infrared photons with differing pixel fabrication procedures and design.