Paper 13103-87
Characterization of Two-layer Al/TiN Microwave Kinetic Inductance Detectors
17 June 2024 • 17:30 - 19:00 Japan Standard Time | Room G5, North - 1F
Abstract
In this paper we will present characterization of our Microwave Kinetic Inductance Detectors (MKIDs). The design process involved using Sonnet and LEdit 8.3. In this design, we employed a structure consisting of TiN (3nm)/Ti (10nm)/TiN(3nm) layers covered by a 100nm aluminum layer. This structure provides a kinetic inductance of 100 pH/Sqcm and a critical temperature of 1.1 Kelvin. The MKIDs were fabricated on 5-inch silicon wafers with a resistivity exceeding 15000 ohmcm. The designs cover three frequency regimes: 1-2 GHz, 2-4 GHz, and 3-6 GHz. This variation in frequency ranges allows us to study the improvement of quality factors and provides a range of frequencies for testing our electronics.
Presenter
Nazarbayev Univ. (Kazakhstan)
Prof. Mehdi Shafiee is an assistant professor at the electrical engineering department at Nazarbayev University. He has wide experience in developing low temperature detectors. His main research focus is on the development of MKIDs and Ultra fast astronomy. He worked on MKIDs sensitive to mm-range, visible light and dark matter. He is also a member of international projects called LEGEND-200 and LEGEND-1000 which are about development of the low temperature detectors for studying neutrino less double beta decays.